EMF8T2R

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EMF8T2R

Manufacturer part number:EMF8T2R

Manufacturer:ROHM Semiconductor

Description:EMF8T2R datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ROHM Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:EMF8T2R Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Packaging	Tape & Reel (TR)
Published	2004
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	TIN COPPER
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code	8541.21.00.75
Subcategory	Other Transistors
Max Power Dissipation	150mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
Time@Peak Reflow Temperature-Max (s)	10
Pin Count	6
Number of Elements	2
Polarity	NPN
Element Configuration	Dual
Transistor Application	SWITCHING
Transistor Type	1 NPN Pre-Biased, 1 NPN
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	68 @ 5mA 5V / 270 @ 10mA 2V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 10mA / 250mV @ 10mA, 200mA
Collector Emitter Breakdown Voltage	12V
Voltage - Collector Emitter Breakdown (Max)	50V 12V
Current - Collector (Ic) (Max)	100mA 500mA
Transition Frequency	250MHz
Frequency - Transition	250MHz 320MHz
hFE Min	270
Resistor - Base (R1)	47k Ω
Resistor - Emitter Base (R2)	47k Ω
Radiation Hardening	No
RoHS Status	ROHS3 Compliant