ES6U42T2R

new-10%

Manufacturer part number:ES6U42T2R

Manufacturer:ROHM Semiconductor

Description:MOSFET P-CH 20V 1A WEMT6

Case Package:SOT-23

Datasheet:ES6U42T2R Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e2
Pbfree Code	yes
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin/Copper (Sn/Cu)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	10
Pin Count	6
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	700mW Ta
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	9 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	390m Ω @ 1A, 4.5V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 10V
Current - Continuous Drain (Id) @ 25°C	1A Ta
Gate Charge (Qg) (Max) @ Vgs	2.1nC @ 4.5V
Rise Time	8ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±12V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	1A
Gate to Source Voltage (Vgs)	12V
Drain Current-Max (Abs) (ID)	1A
Drain-source On Resistance-Max	0.43Ohm
Drain to Source Breakdown Voltage	-20V
FET Feature	Schottky Diode (Body)
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free