IMB10AT110

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IMB10AT110

Manufacturer part number:IMB10AT110

Manufacturer:ROHM Semiconductor

Description:IMB10AT110 datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ROHM Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:IMB10AT110 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Number of Pins	6
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 21
HTS Code	8541.21.00.75
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	-50V
Max Power Dissipation	300mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-100mA
Time@Peak Reflow Temperature-Max (s)	10
Base Part Number	MB10
Pin Count	6
Max Output Current	100mA
Operating Supply Voltage	50V
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Transistor Application	SWITCHING
Transistor Type	2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	250MHz
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
hFE Min	80
Resistor - Base (R1)	2.2k Ω
Continuous Collector Current	-100mA
Resistor - Emitter Base (R2)	47k Ω
VCEsat-Max	0.3 V
Height	1.1mm
Length	2.9mm
Width	1.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free