IMD2AT108

new-10%

Manufacturer part number:IMD2AT108

Manufacturer:ROHM Semiconductor

Description:TRANS NPN/PNP PREBIAS 0.3W SMT6

Case Package:SOT-23

Datasheet:IMD2AT108 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-74, SOT-457
Number of Pins	6
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1
HTS Code	8541.21.00.75
Subcategory	BIP General Purpose Small Signals
Voltage - Rated DC	50V
Max Power Dissipation	300mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	30mA
[email protected] Reflow Temperature-Max (s)	10
Base Part Number	*MD2
Pin Count	6
Max Output Current	100mA
Operating Supply Voltage	50V
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Power Dissipation	300mW
Transistor Application	SWITCHING
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 5mA 5V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	300mV @ 500μA, 10mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	250MHz
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Emitter Base Voltage (VEBO)	5V
hFE Min	56
Resistor - Base (R1)	22k Ω
Continuous Collector Current	30mA
Resistor - Emitter Base (R2)	22k Ω
VCEsat-Max	0.3 V
Height	1.2mm
Length	3mm
Width	1.8mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free