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IMN11T110

  • IMN11T110
  • IMN11T110

IMN11T110

IMN11T110

ROHM Semiconductor

IMN11T110 datasheet pdf and Diodes - Rectifiers - Arrays product details from ROHM Semiconductor stock available on our website

SOT-23

IMN11T110 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-74, SOT-457
Number of Pins 6
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2005
Tolerance 1%
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated 50V
HTS Code 8541.10.00.70
Capacitance 100pF
Subcategory Signal Diodes
Voltage - Rated DC 80V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
[email protected] Reflow Temperature-Max (s) 10
Base Part Number MN11
Case Code (Imperial) 0402
Number of Elements 4
Element Configuration Common Cathode
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 100nA @ 70V
Power Dissipation 300mW
Output Current 100mA
Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA
Forward Current 100mA
Max Reverse Leakage Current 100nA
Operating Temperature - Junction 150°C Max
Max Surge Current 4A
Forward Voltage 1.2V
Max Reverse Voltage (DC) 80V
Average Rectified Current 100mA
Reverse Recovery Time 4 ns
Peak Reverse Current 100nA
Max Repetitive Reverse Voltage (Vrrm) 80V
Peak Non-Repetitive Surge Current 4A
Diode Configuration 2 Pair Common Cathode
Max Forward Surge Current (Ifsm) 300mA
Recovery Time 4 ns
Reverse Test Voltage 70V
Height 1.1mm
Length 990.6μm
Width 508μm
Thickness 558.8μm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.812348 $5.812348
10 $5.483347 $54.83347
100 $5.172969 $517.2969
500 $4.880159 $2440.0795
1000 $4.603924 $4603.924
IMN11T110 Product Details

IMN11T110 Overview


In operation, this device will be set to 1.2V volts forward.Monarrayoring the surge current and preventing array from exceeding 4A should be the rule.When the forward voltage is set to 100mA, this device will operate.The part can be used to draw a current of 100mA.In this device, there are approximately 100pF farads of capacitance.Array is powered by a reverse voltage peak of 100nA.When it's reverse biased, it's maximal reverse leakage current is 100nA.In addition to its primary function, this device creates "300mW" of heat (energy loss).A device like this produces the most 300mW heat (energy loss or waste).

IMN11T110 Features


1.2V forward voltage
100pF farads
a peak voltage of 100nA
a reverse voltage peak of 100nA

IMN11T110 Applications


There are a lot of ROHM Semiconductor IMN11T110 applications of rectifier diode array.

  • Rectifiers for UBS
  • Rectifiers in switch mode power supplies (SMPS)
  • Rectifier for drives applications
  • Battery chargers
  • General Rectification
  • Free wheeling diode in low voltage converters
  • Crowbar applications

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