R6015ENZC17

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Manufacturer part number:R6015ENZC17

Manufacturer:ROHM Semiconductor

Description:MOSFET (Metal Oxide) N-Channel 290m Ω @ 6.5A, 10V ±20V 910pF @ 25V 40nC @ 10V 600V TO-3P-3 Full Pack

Case Package:SOT-23

Datasheet:R6015ENZC17 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Operating Temperature	150°C TJ
Part Status	Active
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	120W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	290m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	910pF @ 25V
Current - Continuous Drain (Id) @ 25°C	15A Tc
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V

Quantity	Unit Price	Ext. Price
1	$4.002338	$4.002338
10	$3.775791	$37.75791
100	$3.562067	$356.2067
500	$3.360441	$1680.2205
1000	$3.170227	$3170.227

R6015ENZC17 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 910pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).