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R6020ENZC17

R6020ENZC17

R6020ENZC17

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 196m Ω @ 9.5A, 10V ±20V 1400pF @ 25V 60nC @ 10V 600V TO-3P-3 Full Pack

SOT-23

R6020ENZC17 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature 150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 120W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 196m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
R6020ENZC17 Product Details

R6020ENZC17 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1400pF @ 25V is its maximum input capacitance.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

R6020ENZC17 Features


a 600V drain to source voltage (Vdss)


R6020ENZC17 Applications


There are a lot of ROHM Semiconductor
R6020ENZC17 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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