R6020JNZC17

join

new-10%

Manufacturer part number:R6020JNZC17

Manufacturer:ROHM Semiconductor

Description:MOSFET (Metal Oxide) N-Channel 234m Ω @ 10A, 15V ±30V 1500pF @ 100V 45nC @ 15V 600V TO-3P-3 Full Pack

Case Package:SOT-23

Datasheet:R6020JNZC17 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Operating Temperature	150°C TJ
Part Status	Active
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	76W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	234m Ω @ 10A, 15V
Vgs(th) (Max) @ Id	7V @ 3.5mA
Input Capacitance (Ciss) (Max) @ Vds	1500pF @ 100V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 15V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	15V
Vgs (Max)	±30V

Quantity	Unit Price	Ext. Price
1	$5.624828	$5.624828
10	$5.306441	$53.06441
100	$5.006077	$500.6077
500	$4.722714	$2361.357
1000	$4.455391	$4455.391

R6020JNZC17 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1500pF @ 100V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (15V).