R6025FNZC8

new-10%

Manufacturer part number:R6025FNZC8

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 600V 25A TO3PF

Case Package:SOT-23

Datasheet:R6025FNZC8 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Published	2013
Part Status	Last Time Buy
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	150W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	180m Ω @ 12.5A, 10V
Vgs(th) (Max) @ Id	5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	25A
Drain-source On Resistance-Max	0.18Ohm
Pulsed Drain Current-Max (IDM)	100A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	42.1 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free