R6025JNZC17

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Manufacturer part number:R6025JNZC17

Manufacturer:ROHM Semiconductor

Description:MOSFET (Metal Oxide) N-Channel 182m Ω @ 12.5A, 15V ±30V 1900pF @ 100V 57nC @ 15V 600V TO-3P-3 Full Pack

Case Package:SOT-23

Datasheet:R6025JNZC17 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Operating Temperature	150°C TJ
Part Status	Active
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	85W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	182m Ω @ 12.5A, 15V
Vgs(th) (Max) @ Id	7V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 100V
Current - Continuous Drain (Id) @ 25°C	25A Tc
Gate Charge (Qg) (Max) @ Vgs	57nC @ 15V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	15V
Vgs (Max)	±30V

Quantity	Unit Price	Ext. Price
1	$11.287899	$11.287899
10	$10.648962	$106.48962
100	$10.046191	$1004.6191
500	$9.477538	$4738.769
1000	$8.941074	$8941.074

R6025JNZC17 Overview

A device's maximal input capacitance is 1900pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (15V).