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R6035KNZC17

R6035KNZC17

R6035KNZC17

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 102m Ω @ 18.1A, 10V ±20V 3000pF @ 25V 72nC @ 10V 600V TO-3P-3 Full Pack

SOT-23

R6035KNZC17 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature 150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 102W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 102m Ω @ 18.1A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 3000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 35A Tc
Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
R6035KNZC17 Product Details

R6035KNZC17 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3000pF @ 25V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

R6035KNZC17 Features


a 600V drain to source voltage (Vdss)


R6035KNZC17 Applications


There are a lot of ROHM Semiconductor
R6035KNZC17 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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