R6520ENZC17

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Manufacturer part number:R6520ENZC17

Manufacturer:ROHM Semiconductor

Description:MOSFET (Metal Oxide) N-Channel 205m Ω @ 9.5A, 10V ±20V 1.4nF @ 25V 61nC @ 10V 650V TO-3P-3 Full Pack

Case Package:SOT-23

Datasheet:R6520ENZC17 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Operating Temperature	150°C TJ
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	68W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	205m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id	4V @ 630μA
Input Capacitance (Ciss) (Max) @ Vds	1.4nF @ 25V
Current - Continuous Drain (Id) @ 25°C	20A Tc
Gate Charge (Qg) (Max) @ Vgs	61nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$5.060269	$5.060269
10	$4.773839	$47.73839
100	$4.503621	$450.3621
500	$4.248699	$2124.3495
1000	$4.008206	$4008.206

R6520ENZC17 Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1.4nF @ 25V.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).