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R6520KNZC8

R6520KNZC8

R6520KNZC8

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 205m Ω @ 9.5A, 10V ±20V 1.55nF @ 25V 40nC @ 10V 650V TO-3P-3 Full Pack

SOT-23

R6520KNZC8 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 68W Tc
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 205m Ω @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 630μA
Input Capacitance (Ciss) (Max) @ Vds 1.55nF @ 25V
Current - Continuous Drain (Id) @ 25°C 20A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 20A
Drain-source On Resistance-Max 0.205Ohm
Pulsed Drain Current-Max (IDM) 60A
DS Breakdown Voltage-Min 650V
Avalanche Energy Rating (Eas) 444 mJ
RoHS Status ROHS3 Compliant
R6520KNZC8 Product Details

R6520KNZC8 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 444 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1.55nF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 20A.Pulsed drain current is maximum rated peak drain current 60A.A normal operation of the DS requires keeping the breakdown voltage above 650V.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

R6520KNZC8 Features


the avalanche energy rating (Eas) is 444 mJ
based on its rated peak drain current 60A.
a 650V drain to source voltage (Vdss)


R6520KNZC8 Applications


There are a lot of ROHM Semiconductor
R6520KNZC8 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching

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