R6524ENZC17

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Manufacturer part number:R6524ENZC17

Manufacturer:ROHM Semiconductor

Description:MOSFET (Metal Oxide) N-Channel 185m Ω @ 11.3A, 10V ±20V 1.65nF @ 25V 70nC @ 10V 650V TO-3P-3 Full Pack

Case Package:SOT-23

Datasheet:R6524ENZC17 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Operating Temperature	150°C TJ
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	74W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	185m Ω @ 11.3A, 10V
Vgs(th) (Max) @ Id	4V @ 750μA
Input Capacitance (Ciss) (Max) @ Vds	1.65nF @ 25V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	70nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$5.430050	$5.43005
10	$5.122689	$51.22689
100	$4.832725	$483.2725
500	$4.559175	$2279.5875
1000	$4.301108	$4301.108

R6524ENZC17 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.65nF @ 25V.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).