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R6530ENZC17

R6530ENZC17

R6530ENZC17

ROHM Semiconductor

MOSFET (Metal Oxide) N-Channel 140m Ω @ 14.5A, 10V ±20V 2.1nF @ 25V 90nC @ 10V 650V TO-3P-3 Full Pack

SOT-23

R6530ENZC17 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Operating Temperature 150°C TJ
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 86W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 140m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id 4V @ 960μA
Input Capacitance (Ciss) (Max) @ Vds 2.1nF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
R6530ENZC17 Product Details

R6530ENZC17 Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2.1nF @ 25V is its maximum input capacitance.For this transistor to work, a voltage 650V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

R6530ENZC17 Features


a 650V drain to source voltage (Vdss)


R6530ENZC17 Applications


There are a lot of ROHM Semiconductor
R6530ENZC17 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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