R6535ENZC17

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Manufacturer part number:R6535ENZC17

Manufacturer:ROHM Semiconductor

Description:MOSFET (Metal Oxide) N-Channel 115m Ω @ 18.1A, 10V ±20V 2.6nF @ 25V 110nC @ 10V 650V TO-3P-3 Full Pack

Case Package:SOT-23

Datasheet:R6535ENZC17 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Operating Temperature	150°C TJ
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	102W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	115m Ω @ 18.1A, 10V
Vgs(th) (Max) @ Id	4V @ 1.21mA
Input Capacitance (Ciss) (Max) @ Vds	2.6nF @ 25V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Drain to Source Voltage (Vdss)	650V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$6.807337	$6.807337
10	$6.422016	$64.22016
100	$6.058505	$605.8505
500	$5.715572	$2857.786
1000	$5.392049	$5392.049

R6535ENZC17 Overview

An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2.6nF @ 25V is its maximum input capacitance.For this transistor to work, a voltage 650V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.