RB530XNTR datasheet pdf and Diodes - Rectifiers - Arrays product details from ROHM Semiconductor stock available on our website
SOT-23
RB530XNTR Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Number of Pins
6
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2008
Tolerance
10%
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Max Operating Temperature
85°C
Min Operating Temperature
-55°C
Voltage - Rated
10V
Additional Feature
HIGH RELIABILITY
HTS Code
8541.10.00.70
Capacitance
10nF
Subcategory
Other Diodes
Voltage - Rated DC
30V
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
100mA
Base Part Number
RB530XN
Case Code (Metric)
0603
Case Code (Imperial)
0201
Number of Elements
3
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1μA @ 10V
Voltage - Forward (Vf) (Max) @ If
530mV @ 100mA
Forward Current
100mA
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
125°C Max
Max Surge Current
1A
Forward Voltage
530mV
Peak Reverse Current
1μA
Max Repetitive Reverse Voltage (Vrrm)
30V
Peak Non-Repetitive Surge Current
1A
Diode Configuration
3 Independent
Max Forward Surge Current (Ifsm)
1A
Length
609.6μm
Width
304.8μm
Thickness
330.2μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.053638
$0.053638
500
$0.039440
$19.72
1000
$0.032867
$32.867
2000
$0.030153
$60.306
5000
$0.028180
$140.9
10000
$0.026214
$262.14
15000
$0.025352
$380.28
50000
$0.024928
$1246.4
RB530XNTR Product Details
RB530XNTR Overview
As long as the forward voltage is set to 530mV, the device will operate.Monarrayoring the surge current and preventing array from exceeding 1A should be the rule.There will be no operation of this device when the forward voltage is set to 100mA.This part can draw 100mA current.Approximately 10nF farads of capacitance are present in this device.In devices such as this one, reverse voltage peak is set at 1μA.When reverse biased, its maximal reverse leakage current is 1μA, which is the current flowing from that semiconductor device.
RB530XNTR Features
530mV forward voltage 10nF farads a peak voltage of 1μA a reverse voltage peak of 1μA
RB530XNTR Applications
There are a lot of ROHM Semiconductor RB530XNTR applications of rectifier diode array.