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RLZTE-1111B

RLZTE-1111B

RLZTE-1111B

ROHM Semiconductor

ZENER DIODE 10Ohm ±3% 11V 200nA @ 8V 500mW 2 Terminations DO-213AC, MINI-MELF, SOD-80

SOT-23

RLZTE-1111B Datasheet

non-compliant

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Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case DO-213AC, MINI-MELF, SOD-80
Number of Pins 34
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Published 2005
Tolerance ±3%
JESD-609 Code e3/e2
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN/TIN COPPER
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
HTS Code 8541.10.00.50
Max Power Dissipation 500mW
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
JESD-30 Code O-LELF-R2
Qualification Status Not Qualified
Number of Elements 1
Polarity UNIDIRECTIONAL
Impedance 10Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 200nA @ 8V
Power Dissipation 500mW
Case Connection ISOLATED
Max Reverse Leakage Current 200nA
Impedance-Max 10Ohm
Reference Voltage 11V
Zener Voltage 11V
Voltage Tol-Max 2.6%
Working Test Current 10mA
Voltage Tolerance 3%
RoHS Status ROHS3 Compliant
RLZTE-1111B Product Details

RLZTE-1111B Overview


An electrical device such as this requires reverse leakage current of 200nA @ 8V.A voltage of 2.6% is considered to be the maximum that can be output (Tol).A maximum reverse leakage current is reached at 200nA.Setting the working test voltage to 10mA is required to operate this device.

RLZTE-1111B Features


reverse leakage current of 200nA @ 8V
200nA @ 8V is the maximum voltage (Tol)
Reverse leakage current reaches 200nA
the working test voltage to 10mA
minimal dynamic impedance is 10mA


RLZTE-1111B Applications


There are a lot of ROHM Semiconductor
RLZTE-1111B applications of zener single diodes.


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