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TFZGTR12B

  • TFZGTR12B
  • TFZGTR12B

TFZGTR12B

TFZGTR12B

ROHM Semiconductor

ZENER DIODE 12Ohm 12V 200nA @ 9V -55°C~150°C 500mW 2-SMD, Flat Lead

SOT-23

TFZGTR12B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 3 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 2-SMD, Flat Lead
Number of Pins 2
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Published 2003
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.10.00.50
Max Power Dissipation 500mW
Number of Elements 1
Impedance 12Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 200nA @ 9V
Power Dissipation 500mW
Max Reverse Leakage Current 200nA
Impedance-Max 12Ohm
Reference Voltage 12V
Zener Voltage 12V
Voltage Tolerance 3%
Zener Current 10mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.053160 $0.05316
500 $0.039088 $19.544
1000 $0.032574 $32.574
2000 $0.029884 $59.768
5000 $0.027929 $139.645
10000 $0.025980 $259.8
15000 $0.025126 $376.89
50000 $0.024706 $1235.3
TFZGTR12B Product Details

TFZGTR12B Overview


A reverse leakage current of 200nA @ 9V is required to supply this electrical device.200nA is the maximum reverse leakage current.The design is highly flexible due to the zener current of 10mA.

TFZGTR12B Features


reverse leakage current of 200nA @ 9V
200nA @ 9V is the maximum voltage (Tol)
Reverse leakage current reaches 200nA
the zener current of 10mA


TFZGTR12B Applications


There are a lot of ROHM Semiconductor
TFZGTR12B applications of zener single diodes.


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