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TFZGTR8.2B

TFZGTR8.2B

TFZGTR8.2B

ROHM Semiconductor

ZENER DIODE 8Ohm 8.2V 500nA @ 5V -55°C~150°C 500mW 2-SMD, Flat Lead

SOT-23

TFZGTR8.2B Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 2-SMD, Flat Lead
Number of Pins 2
Operating Temperature -55°C~150°C
Packaging Tape & Reel (TR)
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.10.00.50
Max Power Dissipation 500mW
Number of Elements 1
Impedance 8Ohm
Element Configuration Single
Diode Type ZENER DIODE
Current - Reverse Leakage @ Vr 500nA @ 5V
Power Dissipation 500mW
Max Reverse Leakage Current 500nA
Impedance-Max 8Ohm
Reference Voltage 8.2V
Zener Voltage 8.2V
Voltage Tolerance 3%
Zener Current 20mA
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
TFZGTR8.2B Product Details

TFZGTR8.2B Overview


An electrical device like this requires a reverse leakage current of 500nA @ 5V.During reverse leakage, the maximum current reaches 500nA.Design flexibility is enhanced by its zener current of 20mA.

TFZGTR8.2B Features


reverse leakage current of 500nA @ 5V
500nA @ 5V is the maximum voltage (Tol)
Reverse leakage current reaches 500nA
the zener current of 20mA


TFZGTR8.2B Applications


There are a lot of ROHM Semiconductor
TFZGTR8.2B applications of zener single diodes.


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