M470T2864QZ3-CE6

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Manufacturer part number:M470T2864QZ3-CE6

Manufacturer:Samsung Electronics

Description:M470T2864QZ3-CE6 datasheet pdf and Memory Cards product details from Samsung Electronics stock available on our website

Case Package:SOT-23

Datasheet:M470T2864QZ3-CE6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Socket
Number of Pins	200
ECCN (US)	4A994.a
Module	DRAM Module
Module Density	1Gbyte
Number of Chip per Module	8
Chip Density (bit)	1G
Data Bus Width (bit)	64
Max. Access Time (ns)	0.45
Maximum Clock Rate (MHz)	667
Chip Configuration	64Mx16
Chip Package Type	FBGA
Minimum Operating Supply Voltage (V)	1.7
Typical Operating Supply Voltage (V)	1.8
Maximum Operating Supply Voltage (V)	1.9
Operating Current (mA)	760
Minimum Operating Temperature (°C)	0
Maximum Operating Temperature (°C)	95
Supplier Temperature Grade	Commercial
Module Sides	Double
ECC Support	No
Number of Ranks	Dual
Number of Chip Banks	8
CAS Latency	5
SPD EEPROM Support	Yes
Standard Package Name	DIM
Supplier Package	USODIMM
Mounting	Socket
Package Height	30
Package Length	67.6
Package Width	3.8(Max)
PCB changed	200
Lead Shape	No Lead
RoHS	Compliant
Part Status	Obsolete
Max Operating Temperature	95 °C
Min Operating Temperature	0 °C
Pin Count	200
Operating Supply Voltage	1.8 V
Number of Elements	8
Max Supply Voltage	1.9 V
Min Supply Voltage	1.7 V
Access Time	450 ps
Organization	128Mx64
Max Frequency	667 MHz
PLL	No
Self Refresh	Yes
Module Type	200USODIMM
RoHS Status	RoHS Compliant