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IRFS150A

IRFS150A

IRFS150A

SAMSUNG SEMICONDUCTOR INC

IRFS150A datasheet pdf and Unclassified product details from SAMSUNG SEMICONDUCTOR INC stock available on our website

SOT-23

IRFS150A Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Surface Mount NO
Number of Terminals 3
Transistor Element Material SILICON
ECCN Code EAR99
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 31A
Drain-source On Resistance-Max 0.04Ohm
Pulsed Drain Current-Max (IDM) 124A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 641 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 100W

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