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IRLR220

IRLR220

IRLR220

SAMSUNG SEMICONDUCTOR INC

IRLR220 datasheet pdf and Unclassified product details from SAMSUNG SEMICONDUCTOR INC stock available on our website

SOT-23

IRLR220 Datasheet

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Specifications
Name Value
Type Parameter
Surface Mount YES
Number of Terminals 2
Transistor Element Material SILICON
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Terminal Form GULL WING
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 1.2Ohm
Pulsed Drain Current-Max (IDM) 16A
DS Breakdown Voltage-Min 200V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 42W
Turn Off Time-Max (toff) 115ns
Turn On Time-Max (ton) 100ns
Power Dissipation Ambient-Max 42W

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