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IRLW610A

IRLW610A

IRLW610A

SAMSUNG SEMICONDUCTOR INC

IRLW610A datasheet pdf and Unclassified product details from SAMSUNG SEMICONDUCTOR INC stock available on our website

SOT-23

IRLW610A Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Surface MountYES
Number of Terminals 2
Transistor Element Material SILICON
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
Terminal FormGULL WING
Pin Count3
JESD-30 Code R-PSSO-G2
Qualification StatusNot Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Operating ModeENHANCEMENT MODE
Case Connection DRAIN
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 3.3A
Drain-source On Resistance-Max 1.5Ohm
Pulsed Drain Current-Max (IDM) 12A
DS Breakdown Voltage-Min 200V
Avalanche Energy Rating (Eas) 29 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 33W
In-Stock:4079 items

About IRLW610A

The IRLW610A from SAMSUNG SEMICONDUCTOR INC is a high-performance microcontroller designed for a wide range of embedded applications. This component features IRLW610A datasheet pdf and Unclassified product details from SAMSUNG SEMICONDUCTOR INC stock available on our website.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRLW610A, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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