GP1M016A060N

new-10%

Manufacturer part number:GP1M016A060N

Manufacturer:SemiQ

Description:MOSFET N-CH 600V 16A TO3PN

Case Package:SOT-23

Datasheet:GP1M016A060N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3PN
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	312W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	470mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	3039pF @ 25V
Current - Continuous Drain (Id) @ 25°C	16A Tc
Gate Charge (Qg) (Max) @ Vgs	53nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V