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1N5619JAN

  • 1N5619JAN
  • 1N5619JAN

1N5619JAN

1N5619JAN

Sensitron Semiconductor

SOT-23

1N5619JAN Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
ECCN (US) EAR99
HTS 8541.10.00.80
Peak Reverse Repetitive Voltage (V) 600
Maximum Continuous Forward Current (A) 1@Ta=50C
Peak Non-Repetitive Surge Current (A) 25
Peak Forward Voltage (V) 1.6@3A
Peak Reverse Current (uA) 0.5
Peak Reverse Recovery Time (ns) 250
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 175
Supplier Temperature Grade Military
Supplier Package Case 102
Mounting Through Hole
Package Length 5.72(Max)
PCB changed 2
Lead Shape Through Hole
Part Status Active
Type Switching Diode
Pin Count 2
Configuration Single
Diameter 2.79(Max)
RoHS Status RoHS non-compliant
1N5619JAN Product Details

1N5619JAN Overview


Datasheets indicate 1.6@3A as the peak forward voltage.RF diode consumes about 1@Ta=50C continuous forward current at any given time.

1N5619JAN Features


the forward peak voltage is 1.6@3A


1N5619JAN Applications


There are a lot of Sensitron Semiconductor
1N5619JAN applications of RF diodes.


  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches
  • Low-loss, high-power limiters

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