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1N5811USJANTX

1N5811USJANTX

1N5811USJANTX

Sensitron Semiconductor

SOT-23

1N5811USJANTX Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
PCB changed 2
Package Width 3.8(Max)
Package Length 5.8(Max)
Package Height 3.8(Max)
Mounting Surface Mount
Supplier Package MELF-B
AEC Qualified No
Supplier Temperature Grade Military
Maximum Operating Temperature (°C) 175
Minimum Operating Temperature (°C) -65
Peak Reverse Recovery Time (ns) 30
Peak Reverse Current (uA) 5
Peak Forward Voltage (V) 0.875@4A
Peak Non-Repetitive Surge Current (A) 125
Maximum Continuous Forward Current (A) 6@Ta=55C
Peak Reverse Repetitive Voltage (V) 150
HTS 8541.10.00.80
ECCN (US) EAR99
Part StatusActive
Type Switching Diode
Pin Count2
Configuration Single
RoHS StatusRoHS non-compliant
In-Stock:2038 items

1N5811USJANTX Product Details

1N5811USJANTX Overview


In the datasheets, 0.875@4A is stated as the peak forward voltage.A continuous forward current of 6@Ta=55C is the maximum consumption of this device.

1N5811USJANTX Features


the forward peak voltage is 0.875@4A


1N5811USJANTX Applications


There are a lot of Sensitron Semiconductor
1N5811USJANTX applications of RF diodes.


  • Radar systems for industrial use
  • Ultra high-speed switching
  • Clamping circuits
  • Diode ring mixer
  • RF detector
  • RF voltage doubler
  • Wearables
  • Smart metering
  • Set top boxes
  • RF attenuators and switches

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