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PC815XNNSZ0F

PC815XNNSZ0F

PC815XNNSZ0F

Sharp Microelectronics

PC815XNNSZ0F datasheet pdf and Optoisolators - Transistor, Photovoltaic Output product details from Sharp Microelectronics stock available on our website

SOT-23

PC815XNNSZ0F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case 4-DIP (0.300, 7.62mm)
Number of Pins 4
Supplier Device Package 4-DIP
Operating Temperature -30°C~100°C
Packaging Tube
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 100°C
Min Operating Temperature -30°C
Max Power Dissipation 200mW
Voltage - Isolation 5000Vrms
Output Type Darlington
Number of Elements 1
Number of Channels 1
Power Dissipation 200mW
Voltage - Forward (Vf) (Typ) 1.2V
Input Type DC
Forward Current 50mA
Max Output Voltage 35V
Output Current per Channel 80mA
Rise Time 300μs
Forward Voltage 1.4V
Fall Time (Typ) 250 μs
Collector Emitter Voltage (VCEO) 35V
Max Collector Current 80mA
Rise / Fall Time (Typ) 60μs 53μs
Current - Output / Channel 80mA
Reverse Breakdown Voltage 6V
Voltage - Output (Max) 35V
Max Input Current 50mA
Collector Emitter Saturation Voltage 1V
Current - DC Forward (If) (Max) 50mA
Current Transfer Ratio (Min) 600% @ 1mA
Current Transfer Ratio (Max) 7500% @ 1mA
Vce Saturation (Max) 1V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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