SI8275GBD-IM1

new-10%

Manufacturer part number:SI8275GBD-IM1

Manufacturer:Silicon Labs

Description:4A 2.5 KV HIGH CMTI DUAL GATE DR

Case Package:SOT-23

Datasheet:SI8275GBD-IM1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Surface Mount
Package / Case	14-VDFN
Operating Temperature	-40°C~125°C
Series	Automotive, AEC-Q100
Part Status	Active
Moisture Sensitivity Level (MSL)	2 (1 Year)
Technology	Capacitive Coupling
Reach Compliance Code	compliant
Approval Agency	CQC, CSA, UL, VDE
Voltage - Isolation	2500Vrms
Number of Channels	2
Analog IC - Other Type	ANALOG CIRCUIT
Current - Output High, Low	1.8A 4A
Rise / Fall Time (Typ)	10.5ns 13.3ns
Propagation Delay tpLH / tpHL (Max)	75ns, 75ns
Common Mode Transient Immunity (Min)	200kV/μs
Pulse Width Distortion (Max)	8ns
Voltage - Output Supply	4.2V~30V
Current - Peak Output	4A
RoHS Status	RoHS Compliant