3STF1640 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
3STF1640 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
NRND (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.5W
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
3STF16
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1.5W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
170mV
Max Collector Current
6A
DC Current Gain (hFE) (Min) @ Ic, Vce
350 @ 1A 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
170mV @ 300mA, 6A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
100MHz
Max Breakdown Voltage
40V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
7V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3STF1640 Product Details
3STF1640 Overview
DC current gain in this device equals 350 @ 1A 1V, which is the ratio of the base current to the collector current.When VCE saturation is 170mV @ 300mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 7V can result in a high level of efficiency.In this part, there is a transition frequency of 100MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.A maximum collector current of 6A volts can be achieved.
3STF1640 Features
the DC current gain for this device is 350 @ 1A 1V the vce saturation(Max) is 170mV @ 300mA, 6A the emitter base voltage is kept at 7V a transition frequency of 100MHz
3STF1640 Applications
There are a lot of STMicroelectronics 3STF1640 applications of single BJT transistors.