BD711 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BD711 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
75W
Frequency
3MHz
Base Part Number
BD711
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
75W
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
12A
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 4A 4V
Current - Collector Cutoff (Max)
100mA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 4A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
40
VCEsat-Max
1 V
Height
9.15mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
BD711 Product Details
BD711 Overview
In this device, the DC current gain is 15 @ 4A 4V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 4A.An emitter's base voltage can be kept at 5V to gain high efficiency.3MHz is present in the transition frequency.Maximum collector currents can be below 12A volts.
BD711 Features
the DC current gain for this device is 15 @ 4A 4V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 400mA, 4A the emitter base voltage is kept at 5V a transition frequency of 3MHz
BD711 Applications
There are a lot of STMicroelectronics BD711 applications of single BJT transistors.