BDX53BFP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.A collector emitter saturation voltage of 2V allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 12mA, 3A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The maximum collector current is 8A volts.
BDX53BFP Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
BDX53BFP Applications
There are a lot of STMicroelectronics BDX53BFP applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
