BDX53BFP datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BDX53BFP Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
Other Transistors
Max Power Dissipation
29W
Base Part Number
BDX53
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
29W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
Vce Saturation (Max) @ Ib, Ic
2V @ 12mA, 3A
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
VCEsat-Max
2 V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
BDX53BFP Product Details
BDX53BFP Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.A collector emitter saturation voltage of 2V allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 12mA, 3A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.The maximum collector current is 8A volts.
BDX53BFP Features
the DC current gain for this device is 750 @ 3A 3V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2V @ 12mA, 3A the emitter base voltage is kept at 5V
BDX53BFP Applications
There are a lot of STMicroelectronics BDX53BFP applications of single BJT transistors.