IRF630FP

new-10%

Manufacturer part number:IRF630FP

Manufacturer:STMicroelectronics

Description:IRF630FP datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:IRF630FP Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tube
Series	MESH OVERLAY™ II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	IRF6
Pin Count	3
Number of Elements	1
Power Dissipation-Max	30W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	30W
Case Connection	ISOLATED
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	400m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	9A Tc
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	9A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	9A
Drain-source On Resistance-Max	0.4Ohm
Drain to Source Breakdown Voltage	200V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free