IRF730

new-10%

Manufacturer part number:IRF730

Manufacturer:STMicroelectronics

Description:IRF730 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:IRF730 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	PowerMESH™ II
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH VOLTAGE, FAST SWITCHING
Subcategory	FET General Purpose Power
Voltage - Rated DC	400V
Technology	MOSFET (Metal Oxide)
Current Rating	5.5A
Base Part Number	IRF7
Pin Count	3
Number of Elements	1
Voltage	400V
Power Dissipation-Max	100W Tc
Element Configuration	Single
Current	55A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	100W
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1 Ω @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	530pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5.5A Tc
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	15 ns
Continuous Drain Current (ID)	5.5A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	1Ohm
Drain to Source Breakdown Voltage	400V
Feedback Cap-Max (Crss)	65 pF
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead