LET9045C datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website
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LET9045C Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Screw
Package / Case
M243
Number of Pins
3
Packaging
Tray
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Subcategory
FET General Purpose Power
Max Power Dissipation
108W
Terminal Position
DUAL
Terminal Form
FLAT
Current Rating
9A
Frequency
960MHz
Base Part Number
LET9045
Pin Count
2
JESD-30 Code
R-PDFM-F2
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
300mA
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
80V
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Continuous Drain Current (ID)
9A
Gate to Source Voltage (Vgs)
15V
Gain
17.7dB
Drain Current-Max (Abs) (ID)
9A
Power - Output
59W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$10.627360
$10.62736
10
$10.025811
$100.25811
100
$9.458313
$945.8313
500
$8.922936
$4461.468
1000
$8.417865
$8417.865
LET9045C Product Details
LET9045C Description
The LET9045C is an enhancement-mode common source N-channel lateral field effect RF power transistor intended for industrial and commercial broadband applications at frequencies up to 1.0 GHz. The LET9045C is intended to operate in common source mode at 28 V with high gain and broadband performance. For base station applications needing excellent linearity, it is perfect.
LET9045C Features
outstanding thermal stability
Config of common sources
POUT (@28 V) is equal to 45 W with 18.5 dB of gain at 960 MHz.
POUT (@36V) is equal to 70 W with 18.5 dB of gain at 960 MHz.