LET9045F datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website
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LET9045F Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Package / Case
M250
Number of Pins
3
Packaging
Tray
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Subcategory
FET General Purpose Power
Max Power Dissipation
108W
Terminal Position
DUAL
Terminal Form
FLAT
Current Rating
9A
Frequency
960MHz
Base Part Number
LET9045
Pin Count
2
JESD-30 Code
R-PDFP-F2
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
300mA
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
80V
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Continuous Drain Current (ID)
9A
Gate to Source Voltage (Vgs)
15V
Gain
17.7dB
Drain Current-Max (Abs) (ID)
9A
Power - Output
59W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.790274
$4.790274
10
$4.519126
$45.19126
100
$4.263327
$426.3327
500
$4.022006
$2011.003
1000
$3.794345
$3794.345
LET9045F Product Details
LET9045F Description
The LET9045F is an enhancement-mode common source n-channel lateral field-effect RF power transistor intended for industrial and commercial broadband applications at frequencies up to 1.0 GHz. The LET9045F operates in common source mode at 28 V and is designed for high gain and broadband performance. For base station applications needing excellent linearity, it is perfect.
LET9045F Features
outstanding thermal stability
Config of common sources
POUT (@28 V) is equal to 45 W with 18.5 dB of gain at 960 MHz.
POUT (@36V) is equal to 70 W with 18.5 dB of gain at 960 MHz.