LET9120 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website
SOT-23
LET9120 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Screw
Package / Case
M246
Number of Pins
246
Packaging
Tray
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Subcategory
FET General Purpose Power
Max Power Dissipation
200W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
18A
Frequency
860MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
LET9120
Pin Count
4
JESD-30 Code
R-PDFM-F4
Qualification Status
Not Qualified
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
400mA
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
80V
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Continuous Drain Current (ID)
18A
Gate to Source Voltage (Vgs)
15V
Gain
18dB
Power - Output
150W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
32V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
60
$182.87500
$10972.5
LET9120 Product Details
LET9120 Description
The LET9120 is an enhancement-mode, common source, n-channel lateral field-effect RF power transistor intended for industrial and commercial broadband applications at frequencies up to 1.6 GHz.
LET9120 Features
outstanding thermal stability
Push-pull common source setup
POUT is equal to 120 W with 18 dB of gain at 860 MHz.