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PD55025

PD55025

PD55025

STMicroelectronics

PD55025 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website

SOT-23

PD55025 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Package / Case PowerSO-10 Exposed Bottom Pad
Surface Mount YES
Number of Pins 3
Packaging Tube
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature HIGH RELIABILITY
Subcategory FET General Purpose Power
Max Power Dissipation 79W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 7A
Frequency 500MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number PD55025
Pin Count 2
JESD-30 Code R-PDSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 79W
Case Connection SOURCE
Current - Test 200mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 40V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 7A
Gate to Source Voltage (Vgs) 20V
Gain 14.5dB
Drain Current-Max (Abs) (ID) 7A
Drain to Source Breakdown Voltage 40V
Power - Output 25W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 12.5V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $21.25000 $1062.5
PD55025 Product Details

PD55025 Description

 

PD55025 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes PD55025 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD55025 has the excellent thermal stability.

 

 

PD55025 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

POUT= 300 W min. with 20 dB gain @ 30 MHz

Thermally enhanced packaging for lower junction temperatures

 

 

PD55025 Applications

 

ISM applications

DC large signal applications


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