PD55025 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website
SOT-23
PD55025 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Package / Case
PowerSO-10 Exposed Bottom Pad
Surface Mount
YES
Number of Pins
3
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Max Power Dissipation
79W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
7A
Frequency
500MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
PD55025
Pin Count
2
JESD-30 Code
R-PDSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
79W
Case Connection
SOURCE
Current - Test
200mA
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
40V
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Continuous Drain Current (ID)
7A
Gate to Source Voltage (Vgs)
20V
Gain
14.5dB
Drain Current-Max (Abs) (ID)
7A
Drain to Source Breakdown Voltage
40V
Power - Output
25W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
12.5V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$21.25000
$1062.5
PD55025 Product Details
PD55025 Description
PD55025 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes PD55025 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD55025 has the excellent thermal stability.
PD55025 Features
Gold metalization
Excellent thermal stability
Common source configuration
POUT= 300 W min. with 20 dB gain @ 30 MHz
Thermally enhanced packaging for lower junction temperatures