PD57002 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website
SOT-23
PD57002 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Package / Case
PowerSO-10 Exposed Bottom Pad
Number of Pins
10
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Additional Feature
HIGH RELIABILITY
Subcategory
FET General Purpose Power
Max Power Dissipation
4.75W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
250mA
Frequency
960MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
PD57002
Pin Count
2
JESD-30 Code
R-PDSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
4.75W
Case Connection
SOURCE
Current - Test
10mA
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
65V
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Continuous Drain Current (ID)
250mA
Gate to Source Voltage (Vgs)
20V
Gain
15dB
Drain Current-Max (Abs) (ID)
0.25A
Drain to Source Breakdown Voltage
65V
Power - Output
2W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
400
$6.37500
$2550
PD57002 Product Details
PD57002 Description
PD57002 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes PD57002 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD57002 has the excellent thermal stability.
PD57002 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures