PD84002 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website
SOT-23
PD84002 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Mount
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Weight
130.492855mg
Packaging
Cut Tape (CT)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Subcategory
FET General Purpose Power
Max Power Dissipation
6W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
2A
Frequency
870MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
PD84002
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Current - Test
100mA
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
25V
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Continuous Drain Current (ID)
2A
Gate to Source Voltage (Vgs)
15V
Gain
15dB
Max Output Power
2W
Drain Current-Max (Abs) (ID)
2A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
7.5V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$107.197680
$107.19768
10
$101.129887
$1011.29887
100
$95.405554
$9540.5554
500
$90.005239
$45002.6195
1000
$84.910603
$84910.603
PD84002 Product Details
PD84002 Description
PD84002 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes PD84002 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics PD84002 has the excellent thermal stability.
PD84002 Features
Gold metalization
Excellent thermal stability
Common source configuration
POUT= 300 W min. with 20 dB gain @ 30 MHz
Thermally enhanced packaging for lower junction temperatures