PWD13F60 Description

The PWD13F60 from STM is a high-density power driver that integrates gate drivers and four N-channel power MOSFETs in a dual half bridge configuration. It has a low R_DS(on) of 320 m and a drain-source breakdown voltage of 600 V, and the embedded gate drivers' high side can be easily supplied by the integrated bootstrap diode. The device's high integration allows it to drive loads efficiently in a small space.

PWD13F60 Features

Power system-in-package integrating gate drivers and high-voltage power MOSFETs
– Low R_DS(on) = 320 mΩ – B_VDSS = 600 V
Suitable for operating as
– Full bridge
– Dual independent half-bridges
Wide driver supply voltage down to 6.5 V
UVLO protection on supply voltage
3.3 V to 15 V compatible inputs with hysteresis and pull-down
Interlocking function to prevent cross conduction
Internal bootstrap diode
Outputs in phase with inputs
Very compact and simplified layout
Flexible, easy and fast design

PWD13F60 Applications

Motor drivers for industrial and home appliances
Factory automation
Fans and pumps
HID, ballasts
Power supply units
DC-DC and DC-AC converters