SCT10N120H

new-10%

Manufacturer part number:SCT10N120H

Manufacturer:STMicroelectronics

Description:PTD WBG & POWER RF

Case Package:SOT-23

Datasheet:SCT10N120H Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~200°C TJ
Packaging	Tape & Reel (TR)
Part Status	Active
Technology	SiCFET (Silicon Carbide)
Power Dissipation-Max	150W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	690m Ω @ 6A, 20V
Vgs(th) (Max) @ Id	3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 400V
Current - Continuous Drain (Id) @ 25°C	12A Tc
Gate Charge (Qg) (Max) @ Vgs	22nC @ 20V
Drain to Source Voltage (Vdss)	1200V
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	+25V, -10V