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SD2900

SD2900

SD2900

STMicroelectronics

SD2900 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website

SOT-23

SD2900 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Screw
Package / Case M113
Number of Pins 113
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Voltage - Rated DC 65V
Max Power Dissipation 21.9W
Terminal Position RADIAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 900mA
Frequency 400MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number SD2900
Pin Count 4
JESD-30 Code O-PRFM-F4
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 21.9W
Current - Test 50mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Transistor Type N-Channel
Continuous Drain Current (ID) 900mA
Gate to Source Voltage (Vgs) 20V
Gain 16dB
Max Output Power 5W
Drain Current-Max (Abs) (ID) 0.9A
Drain to Source Breakdown Voltage 65V
Input Capacitance 8.5pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
50 $38.86400 $1943.2
SD2900 Product Details

SD2900 Description

 

SD2900 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in 28V DC large signal applications up to 500 MHz. The special low thermal resistance packaging makes SD2900 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics SD2900 has the excellent thermal stability.

 

 

SD2900 Features

 

Common source configuration

Excellent thermal stability

28 VOLTS

2 - 500 MHz

Gold metalization

 

 

SD2900 Applications

 

ISM applications

DC large signal applications

 


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