SD2900 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website
SOT-23
SD2900 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Screw
Package / Case
M113
Number of Pins
113
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Subcategory
FET General Purpose Power
Voltage - Rated DC
65V
Max Power Dissipation
21.9W
Terminal Position
RADIAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
900mA
Frequency
400MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
SD2900
Pin Count
4
JESD-30 Code
O-PRFM-F4
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
21.9W
Current - Test
50mA
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
65V
Transistor Type
N-Channel
Continuous Drain Current (ID)
900mA
Gate to Source Voltage (Vgs)
20V
Gain
16dB
Max Output Power
5W
Drain Current-Max (Abs) (ID)
0.9A
Drain to Source Breakdown Voltage
65V
Input Capacitance
8.5pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
50
$38.86400
$1943.2
SD2900 Product Details
SD2900 Description
SD2900 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in 28V DC large signal applications up to 500 MHz. The special low thermal resistance packaging makes SD2900 N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics SD2900 has the excellent thermal stability.