SD2931-10W Description

A gold-metalized N-channel MOS field-effect RF power transistor is the SD2931-10W. It is designed for usage in 50 V dc large signal applications up to 230 MHz and is electrically identical to the common SD2931 MOSFET.

The SD2931-10W is mechanically compatible with the SD2931 but provides higher thermal performance (a 25% reduction in thermal resistance), making it the best-in-class transistor for ISM applications where dependability and toughness are essential.

SD2931-10W Features

• POUT = 150 W min. with 14 dB gain @ 175 MHz

• Thermally enhanced packaging for lower junction temperatures

• Gold metalization

• Excellent thermal stability

• Common source configuration

SD2931-10W Applications

• Industrial

• RF Communications

• Power Management