SD2932W datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website
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SD2932W Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Mount
Screw
Package / Case
M244
Number of Pins
5
Packaging
Tray
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Subcategory
FET General Purpose Powers
Max Power Dissipation
500W
Current Rating
40A
Frequency
175MHz
Base Part Number
SD2932
Number of Elements
2
Element Configuration
Dual
Power Dissipation
500W
Current - Test
500mA
Drain to Source Voltage (Vdss)
125V
Transistor Type
N-Channel
Continuous Drain Current (ID)
40A
Gate to Source Voltage (Vgs)
20V
Gain
16dB
Drain to Source Breakdown Voltage
125V
Power - Output
300W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
Min Breakdown Voltage
125V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$147.475000
$147.475
10
$139.127358
$1391.27358
100
$131.252225
$13125.2225
500
$123.822854
$61911.427
1000
$116.814013
$116814.013
SD2932W Product Details
SD2932W Description
SD2932 MOSFET is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications. The special low thermal resistance packaging makes SD2932W N-channel MOSFET suitable for ISM applications in which reliability and durability are essential. STMicroelectronics SD2932W has the excellent thermal stability.
SD2932W Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging for lower junction temperatures