SD2933 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website
SOT-23
SD2933 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Screw
Package / Case
M177
Number of Pins
4
Packaging
Tray
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Subcategory
FET General Purpose Power
Voltage - Rated DC
125V
Max Power Dissipation
648W
Terminal Position
RADIAL
Terminal Form
FLAT
Current Rating
40A
Frequency
30MHz
Base Part Number
SD2933
Pin Count
5
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
648W
Case Connection
SOURCE
Current - Test
250mA
Drain to Source Voltage (Vdss)
125V
Transistor Type
N-Channel
Continuous Drain Current (ID)
40A
Gate to Source Voltage (Vgs)
20V
Max Output Power
400W
Drain to Source Breakdown Voltage
125V
Input Capacitance
1nF
Power - Output
300W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
50V
Min Breakdown Voltage
125V
Power Gain
23.5dB
Height
7.11mm
Length
28.96mm
Width
16.13mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
SD2933 Product Details
SD2933 Description
SD2933 is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes it suitable for ISM applications in which reliability and durability are essential.
SD2933 Features
Gold metalization Excellent thermal stability Common source configuration POUT= 300 W min. with 20 dB gain @ 30 MHz Thermally enhanced packaging for lower junction temperatures