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SD56120M

SD56120M

SD56120M

STMicroelectronics

SD56120M datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website

SOT-23

SD56120M Datasheet

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Specifications
Name Value
Type Parameter
Mount Screw
Package / Case M252
Number of Pins 5
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory FET General Purpose Power
Voltage - Rated DC 65V
Max Power Dissipation 236W
Terminal Form FLAT
Current Rating 14A
Frequency 860MHz
Base Part Number SD56120
Pin Count 4
JESD-30 Code R-PDFM-F4
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 236W
Case Connection SOURCE
Current - Test 400mA
Transistor Application AMPLIFIER
Drain to Source Voltage (Vdss) 65V
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Gain 16dB
Max Output Power 120W
Drain to Source Breakdown Voltage 65V
Input Capacitance 221pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 32V
Min Breakdown Voltage 65V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
SD56120M Product Details

SD56120M Description

 

 

SD56120M N-channel Power MOSFET developed using SuperMESH technology. SD56120M MOSFET revolutionary, Avalanche-rugged, high-voltage Power technology relies on an original, exclusive vertical structure. It results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. STMicroelectronics SD56120M is utilized in Switching applications.

 

 

SD56120M Features

 

Ultra low gate charge

Worldwide best FOM

Best RDS(on)

100% avalanche tested

Zener-protected

 

 

SD56120M Applications

 

Notebook PC

Synchronous Buck for Notebook Vcore and Server

Notebook Battery Pack

Load Switch


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