SD56120M datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website
SOT-23
SD56120M Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Screw
Package / Case
M252
Number of Pins
5
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Subcategory
FET General Purpose Power
Voltage - Rated DC
65V
Max Power Dissipation
236W
Terminal Form
FLAT
Current Rating
14A
Frequency
860MHz
Base Part Number
SD56120
Pin Count
4
JESD-30 Code
R-PDFM-F4
Number of Elements
2
Element Configuration
Dual
Operating Mode
ENHANCEMENT MODE
Power Dissipation
236W
Case Connection
SOURCE
Current - Test
400mA
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
65V
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Continuous Drain Current (ID)
14A
Gate to Source Voltage (Vgs)
20V
Gain
16dB
Max Output Power
120W
Drain to Source Breakdown Voltage
65V
Input Capacitance
221pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
32V
Min Breakdown Voltage
65V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
SD56120M Product Details
SD56120M Description
SD56120M N-channel Power MOSFET developed using SuperMESH technology. SD56120M MOSFET revolutionary, Avalanche-rugged, high-voltage Power technology relies on an original, exclusive vertical structure. It results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. STMicroelectronics SD56120M is utilized in Switching applications.