SD57060 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available on our website
SOT-23
SD57060 Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
NRND (Last Updated: 8 months ago)
Mount
Screw
Package / Case
M243
Number of Pins
243
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Subcategory
FET General Purpose Power
Voltage - Rated DC
65V
Max Power Dissipation
108W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
7A
Frequency
945MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
SD57060
Pin Count
3
JESD-30 Code
R-PDFM-F2
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
108W
Case Connection
SOURCE
Current - Test
100mA
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
65V
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Continuous Drain Current (ID)
7A
Gate to Source Voltage (Vgs)
20V
Gain
15dB
Max Output Power
60W
Drain Current-Max (Abs) (ID)
7A
Drain to Source Breakdown Voltage
65V
Input Capacitance
88pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$80.21000
$80.21
10
$76.07300
$760.73
100
$68.82750
$6882.75
SD57060 Product Details
SD57060 Description
For industrial and commercial broadband applications at frequencies up to 1.0 GHz, the SD57060 is an N-Channel common source enhancement-mode lateral field-effect RF power transistor. The SD57060 is made to operate in common source mode at 28V with good gain and broadband performance. For base station applications needing excellent linearity, it is perfect.