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STB120NF10T4

STB120NF10T4

STB120NF10T4

STMicroelectronics

STB120NF10T4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STB120NF10T4 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 13.607771g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series STripFET™ II
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 10.5mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Current Rating 120A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STB120N
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 312W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 312W
Case Connection DRAIN
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 233nC @ 10V
Rise Time 90ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 68 ns
Turn-Off Delay Time 132 ns
Continuous Drain Current (ID) 110A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 480A
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 550 mJ
Nominal Vgs 4 V
Height 4.6mm
Length 10.4mm
Width 9.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
STB120NF10T4 Product Details

STB120NF10T4 Description

STMicroelectronics' STRIPFET process has been used to develop STB120NF10T4 Power MOSFETs, which have been designed to minimize input capacitance and gate charge. Due to this feature, the STB120NF10T4 is well suited for use as the primary switch in high-efficiency isolated DC-DC converters for telecommunications and computing applications, as well as applications that require low gate charge driving.


STB120NF10T4 Features

  • Low gate charge

  • 100% avalanche tested

  • Exceptional dv/dt capability


STB120NF10T4 Applications

  • Switching applications

  • RF Amplifiers circuit

  • Audio amplifiers applications

  • Amplification circuits

  • Load driver circuits


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