STB120NF10T4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
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STB120NF10T4 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins
3
Weight
13.607771g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
10.5mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Current Rating
120A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STB120N
Pin Count
4
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
312W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
312W
Case Connection
DRAIN
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
110A Tc
Gate Charge (Qg) (Max) @ Vgs
233nC @ 10V
Rise Time
90ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
68 ns
Turn-Off Delay Time
132 ns
Continuous Drain Current (ID)
110A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
480A
Dual Supply Voltage
100V
Avalanche Energy Rating (Eas)
550 mJ
Nominal Vgs
4 V
Height
4.6mm
Length
10.4mm
Width
9.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
STB120NF10T4 Product Details
STB120NF10T4 Description
STMicroelectronics' STRIPFET process has been used to develop STB120NF10T4 Power MOSFETs, which have been designed to minimize input capacitance and gate charge. Due to this feature, the STB120NF10T4 is well suited for use as the primary switch in high-efficiency isolated DC-DC converters for telecommunications and computing applications, as well as applications that require low gate charge driving.