Name: STB120NF10T4
Brand: STMicroelectronics
SKU: STB120NF10T4
Price: 5.00000 USD
Availability: InStock

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STB120NF10T4

Manufacturer part number:STB120NF10T4

Manufacturer:STMicroelectronics

Description:STB120NF10T4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STB120NF10T4 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Weight	13.607771g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	STripFET™ II
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	10.5mOhm
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	120A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB120N
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	312W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	312W
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	10.5m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	110A Tc
Gate Charge (Qg) (Max) @ Vgs	233nC @ 10V
Rise Time	90ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	68 ns
Turn-Off Delay Time	132 ns
Continuous Drain Current (ID)	110A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	480A
Dual Supply Voltage	100V
Avalanche Energy Rating (Eas)	550 mJ
Nominal Vgs	4 V
Height	4.6mm
Length	10.4mm
Width	9.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STB120NF10T4 Product Details

STB120NF10T4 Description

STMicroelectronics' STRIPFET process has been used to develop STB120NF10T4 Power MOSFETs, which have been designed to minimize input capacitance and gate charge. Due to this feature, the STB120NF10T4 is well suited for use as the primary switch in high-efficiency isolated DC-DC converters for telecommunications and computing applications, as well as applications that require low gate charge driving.