STB9NK60ZDT4

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STB9NK60ZDT4

Manufacturer part number:STB9NK60ZDT4

Manufacturer:STMicroelectronics

Description:MOSFET N-CH 600V 7A D2PAK

Case Package:SOT-23

Datasheet:STB9NK60ZDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	SuperFREDmesh™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	950MOhm
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	FET General Purpose Power
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	7A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STB9N
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	125W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	125W
Turn On Delay Time	22 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	950m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	1110pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	53nC @ 10V
Rise Time	17ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	42 ns
Continuous Drain Current (ID)	7A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	7A
Drain to Source Breakdown Voltage	600V
Pulsed Drain Current-Max (IDM)	28A
Dual Supply Voltage	600V
Nominal Vgs	3.5 V
Height	4.6mm
Length	10.4mm
Width	9.35mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free